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RAP opportunity at Naval Research Laboratory     NRL

Radiation effects in microelectronic devices

Location

Naval Research Laboratory, DC, Electronics Science & Technology Division

opportunity location
64.15.25.C1158 Washington, DC 203755321

Advisers

name email phone
Ani Khachatrian ani.khachatrian.civ@us.navy.mil 202 767 5467

Description

Current projects focus on studies of radiation effects in microelectronic devices used in space—specifically single-event effects (SEEs) in Si-based, wide-bandgap (WBG) and ultrawide-bandgap (UWBG) microelectronic devices. Space radiation is emulated in laboratory conditions using ultrafast lasers. Pulsed-laser single-event effects (PL-SEE) methods are employed to study destructive and non-destructive single-event effects, ensuring device reliability for high-power and high-frequency applications in harsh particle radiation environments.

The ideal candidate will have expertise in:

·         Strong understanding of radiation effects in microelectronics (Required).

·         Electrical circuit design and microelectronic device packaging (Highly Desirable).

·         Writing peer-reviewed publications and presenting research findings at technical conferences (Required).

·         Developing scripts for data acquisition and analysis using MATLAB or Python (Desirable).

·         Experience conducting pulsed-laser single-event effects (PL-SEE) characterization of microelectronics (Desirable)).

·         Implementation of linear- and nonlinear optical spectroscopic approaches to study light-matter interactions at the device level (Desirable) .

References

[1]        A. Khachatrian, S. P. Buchner, A. D. Koehler, G. M. Foster, and D. P. McMorrow, “Laser-Induced Single-Event Burnout in GaN Devices,” IEEE Trans. Nucl. Sci., vol. 73, no. 4, pp. 1196–1205, Apr. 2026.

[2]        S. P. Stepanoff, A. Khachatrian, A. Haque, F. Ren, S. Pearton, and D. E. Wolfe, “Localized Stress Effects on the Single Event Effects Sensitivity of Microelectronics,” ECS J. Solid State Sci. Technol., vol. 13, no. 6, Art. no. 065004, Jun. 2024.

[3]      S. J. Pearton, A. Aitkaliyeva, M. H. Xian, F. Ren, A. Khachatrian, A. Ildefonso, et al., "Review-Radiation              Damage in Wide and Ultra-Wide Bandgap Semiconductors," ECS Journal of Solid State Science and Technology, vol. 10, Art. no. 055008, May 2021.

Keywords

Single-event effects; Single-event transients; Microelectronics; Power electronics; Single-photon absorption; Two-photon absorption; Ultrafast lasers; Nonlinear optics.

Eligibility

citizenship

Open to U.S. citizens and permanent residents

level

Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$101,401.00 $3,000.00

Additional Benefits

relocation

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

health insurance

A group health insurance program is available to awardees and their qualifying dependents in the United States.

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