Our research focuses on the development of oxide materials (thin films and substrates) and the incorporation of these materials in high performance wide bandgap transistor applications. Current investigations focus on the depostion and characterization of beta-Ga2O3, ITO, BaTiO3, VO2, Al2O3, and similar materials.  

The research entails device design, fabrication, and testing, as well as optimization and analysis of material microstructural and morphological properties to achieve enhanced device performance with particular emphasis on ALD gate dielectric, ohmic contact, and associated interface development. Research is conducted in a fully equipped ISO-5 device fabrication clean room. Materials characterization capabilities include electron microscopy, ellipsometry, x-ray diffraction, atomic force microscopy, Hall effect and photoluminescence.

References

"Near-ideal vertical β-Ga2O3 Schottky diode reverse leakage current via sputtered ultra-high-κ BaTiO3 dielectric field-management," KJ Liddy et al., APL Electronic Devices 1 (3), 2025.

"Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown," NS Hendricks et al., Applied Physics Express 16 (7), 071002, 2023.

"Homoepitaxial β-Ga2O3 transparent conducting oxide with conductivity σ= 2323 S cm− 1," HM Jeon et al., APL Materials 9 (10), 2021.

 

Beta-Ga2O3; Ga2O3; Dielectrics; Pulsed laser deposition; Atomic layer deposition; Nanotechnology; Wide Bandgap; Substrates, Power semiconductor devices; MOSFET; RF

citizenship

Open to U.S. citizens

level

Open to Postdoctoral and Senior applicants

Additional Benefits

relocation

Awardees who reside more than 50 miles from their host laboratory and remain on tenure for at least six months are eligible for paid relocation to within the vicinity of their host laboratory.

health insurance

A group health insurance program is available to awardees and their qualifying dependents in the United States.