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RAP opportunity at National Institute of Standards and Technology     NIST

EUV Computational Imaging for Nanostructure Characterization

Location

Physical Measurement Laboratory, Nanoscale Device Characterization Division

opportunity location
50.68.03.C0861 Gaithersburg, MD 20899

NIST only participates in the February and August reviews.

Advisers

name email phone
Martin Yeungjoon Sohn martin.sohn@nist.gov 301 975 3155

Description

The project aims to develop computational imaging microscopy using a table-top high harmonic generation EUV source for quantitative characterization of nanoscale structures that contributes to reliable manufacturing of the next generation computing devices. Computational imaging methods such as coherent diffractive imaging, Fourier ptychography, structured illumination techniques, and other super-resolution techniques are explored to achieve quantative assessment of critical dimensions and defects in the semiconductor circuit patterns by reconstructing accurate nanoscale image reconstruction with advanced phase retrieval algorithms. A qualified and preferred candidate would have some expertise and/or experiences in optical microscopy, computational imaging, instrumentation for optical microscopy, data acquisition and automated stage/camera control, optical inspection metrology for semiconductor devices.

key words

Extreme ultraviolet; Computational microscopy; Ptychography; Optical microscopy; Semiconductor Metrology; Defect measurement; Critical dimension measurement; Illumination engineering

Eligibility

citizenship

Open to U.S. citizens

level

Open to Postdoctoral applicants

Stipend

Base Stipend Travel Allotment Supplementation
$102,415.00 $3,000.00
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