RAP opportunity at National Institute of Standards and Technology NIST
EUV Computational Imaging for Nanostructure Characterization
Location
Physical Measurement Laboratory, Nanoscale Device Characterization Division
| opportunity |
location |
|
| 50.68.03.C0861 |
Gaithersburg, MD 20899 |
NIST only participates in the February and August reviews.
Advisers
| name |
email |
phone |
|
| Martin Yeungjoon Sohn |
martin.sohn@nist.gov |
301 975 3155 |
Description
The project aims to develop computational imaging microscopy using a table-top high harmonic generation EUV source for quantitative characterization of nanoscale structures that contributes to reliable manufacturing of the next generation computing devices. Computational imaging methods such as coherent diffractive imaging, Fourier ptychography, structured illumination techniques, and other super-resolution techniques are explored to achieve quantative assessment of critical dimensions and defects in the semiconductor circuit patterns by reconstructing accurate nanoscale image reconstruction with advanced phase retrieval algorithms. A qualified and preferred candidate would have some expertise and/or experiences in optical microscopy, computational imaging, instrumentation for optical microscopy, data acquisition and automated stage/camera control, optical inspection metrology for semiconductor devices.
key words
Extreme ultraviolet; Computational microscopy; Ptychography; Optical microscopy; Semiconductor Metrology; Defect measurement; Critical dimension measurement; Illumination engineering
Eligibility
citizenship
Open to U.S. citizens
level
Open to Postdoctoral applicants
Stipend
| Base Stipend |
Travel Allotment |
Supplementation |
|
| $102,415.00 |
$3,000.00 |
|
|