RAP opportunity at National Institute of Standards and Technology NIST
Developing silicon color centers as quantum transducers
Location
Physical Measurement Laboratory, Nanoscale Device Characterization Division
| opportunity |
location |
|
| 50.68.03.B8247 |
Gaithersburg, MD 20899 |
NIST only participates in the February and August reviews.
Advisers
| name |
email |
phone |
|
| Joshua M. Pomeroy |
joshua.pomeroy@nist.gov |
301.975.5508 |
Description
Quantum information technologies have exploded in recent years, but eventual fault tolerance and networking requires the exchange of quantum information between quantum processing devices. Photons provide the best vehicle for exhanging quantum information due to their discrete nature and robustness to decoherence, however, other quantum implementations like silicon spin qubits and superconducting circuits are far more promising for scaling to the fault tolerant regime. Therefore, robust mechanisms are needed to convert quantum information from scalable systems to photon states that can be transmitted, and then returned to computational states. In this work, we are exploring the use of point defects in silicon that can be used to generate single photon states and coupled to silicon spin qubits. We are building electro-photonic devices that integrate state of the art electronics and photonics and measuring them in optical cryostats that permit both the study of the fundamental properties and the prospects for new technology. The work involves modelling, design, fabrication, packaging and measurements of novel electrophotonic devices in the quantum regime.
key words
Quantum information; Quantum devices; Single electron devices; qubit; materials for quantum; silicon color centers; quantum transducer
Eligibility
citizenship
Open to U.S. citizens
level
Open to Postdoctoral applicants
Stipend
| Base Stipend |
Travel Allotment |
Supplementation |
|
| $102,415.00 |
$3,000.00 |
|
|